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 DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA314 Low-voltage stabistor
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 21
Philips Semiconductors
Product specification
Low-voltage stabistor
FEATURES * Low-voltage stabilization * Forward voltage range: 610 mV to 940 mV * Total power dissipation: max. 400 mW. APPLICATIONS * Low-voltage stabilization e.g. - Bias stabilizer in class-B output stages - Clipping - Clamping - Meter protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Tamb = 25 C CONDITIONS MIN. - - - -65 -
handbook, halfpage k
BA314
DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package.
a
MAM246
Diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
MAX. 5 200 400 +200 200 V
UNIT mA mW C C
1996 Mar 21
2
Philips Semiconductors
Product specification
Low-voltage stabistor
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 IF = 0.1 mA IF = 1 mA IF = 5 mA IF = 10 mA IF = 100 mA IR rdif SF Cd reverse current differential resistance temperature coefficient diode capacitance VR = 4 V IF = 1 mA; f = 1 kHz IF = 10 mA; f = 1 kHz IF = 1 mA VR = 0 V; f = 1 MHz 610 680 730 750 850 - - - - - - - - - - - 30 3.5 -1.8 - 690 760 810 830 940 5 - 6 - 140 MIN. TYP.
BA314
MAX.
UNIT mV mV mV mV mV A mV/K pF
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS 8 mm from the body lead length 10 mm VALUE 300 380 UNIT K/W K/W
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistor
GRAPHICAL DATA
BA314
102 handbook, halfpage IF (mA)
(1) (2)
MBG519
10
1
10-1 0.2
0.4
0.6
0.8
1.0
1.2 VF (V)
Tj = 25 C. (1) Minimum values. (2) Maximum values.
Fig.2
Forward current as a function of forward voltage.
1996 Mar 21
4
Philips Semiconductors
Product specification
Low-voltage stabistor
PACKAGE OUTLINE
BA314
andbook, full pagewidth
0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
MLA428 - 1
Dimensions in mm. Diodes are type branded.
Fig.3 SOD27 (DO-35).
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Mar 21
5


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